SiC enabling logic for 800V high voltage platform, supercharge revolution and autonomous driving computing powerIntroduction: The "electric anxiety" of

 intelligent drivingAn L4 self-driving car consumes up to 4kWh of power per hour (equivalent to 50 laptops), and the battery life and charging speed directly determine the user experience. Silicon carbide (SiC) semiconductors, with their high voltage, high frequency, and high temperature resistance, are becoming the core technology to break through the "energy ceiling" of intelligent driving - not only to make the trolley run farther, but also to make the laser radar, domain controller and other sensing systems "full fire."

Three core scenarios: How does SiC rewrite intelligent driving rules

1. Electric drive system: the "double helix breakthrough" of battery life and performance

Main inverter energy efficiency jump:

The Xopeng G9 uses Infineon SiC modules to increase CLTC life by 8% (up to 702km), while the motor peak power density reaches 2.5kW/kg.

The lightweight revolution of four-wheel-drive models:

The weight of the ET7 front/rear dual SiC electric drive assembly is only 124kg, 30% lighter than the traditional solution, and the acceleration is 3.8 seconds.

2. Supercharged network: The secret of filling 200 kilometers in 5 minutes

Vehicle Charger (OBC) upgrades:

Huawei DriveONE SiC OBC power up to 22kW, charging efficiency 97.5%, support V2L reverse power supply (camping can drive induction cooker for 2 hours).

Superfilled pile "heart" material:

Tesla V4 supercharged pile internal use of ST SiC module, peak current up to 900A, charging rate increased by 25%.

3. Perception and computing: Continuously power the autonomous driving "brain"

Lidar power supply optimization:

SiC SBD (Schottky Diode) increases the power efficiency of the AT128 liDAR to 93%, and the dot frequency exceeds 2 million/s.

Domain controller Efficient power distribution:

The ideal AD Max 3.0 platform uses ROHM SiC MOSFETs to achieve Orin-X chip power supply efficiency of 98% and computing power redundancy of 30%.

Second, data perspective: symbiotic curve of SiC and intelligent driving

Cost decline trajectory:

6 "SiC substrate prices from 2020

1500

/

Chip down to

2023

years

1500/ tablet drops to 800/ tablet in 2023, and is expected to break $500 in 2025 (according to Wolfspeed's financial report).

Market penetration:

Yole predicts that the global automotive SiC market size will reach $3.27 billion in 2025, accounting for 68% of the power electronic devices of new energy vehicles.

Technology iteration node:

2024:1200V SiC MOSFET becomes standard for high-end models (such as Mercedes-Benz EQS and NIO ET9).

2026:8-inch SiC wafers are mass-produced, and the cost per wafer is reduced by another 40%.

2030: SiC+GaN hybrid modules are popularized, supporting 1500V ultra-high voltage platforms.

Conclusion: SiC -- the "invisible rail" of intelligent driving

From improving battery life to empowering supercomputing, silicon carbide (SiC) is laying a "zero-loss energy track" in the field of intelligent driving. When high-voltage fast charge, urban NOA, and cockpit integration become standard, the technical penetration of SiC will no longer be limited to power electronics - it will eventually become an indispensable "superconducting gene" in the "neural vein" of smart cars.