2-Inch P/N Type Silicon Wafer with Ultra-Low Resistivity (0.01~0.09Ω·cm) & Oxide Layer

Maximize performance in high-power and high-frequency applications with our 2-inch P/N Type Silicon Wafer, engineered for ultra-low resistivity (0.01~0.09Ω·cm) and integrated oxide layer functionality. Available in P-type (Boron-doped) and N-type (Phosphorus-doped) variants, this substrate is optimized for cutting-edge semiconductor devices demanding extreme conductivity and thermal management.