Ultra-high resistivity 4-inch FZ (100) single-sided polished silicon (R>1000Ω/10,000Ω) - the core substrate for high performance semiconductor solutions

introduction

The 4-inch floating zone (FZ) wafers are ideal for high-power, high-frequency and high-voltage semiconductor devices thanks to their **<100> crystal orientation, ultra-high resistivity (R>1000Ω·cm to 10,000Ω·cm) and single-sided polishing processes. Its unmatched purity and electrical insulation provide critical material support for RF systems, power electronics and cutting-edge research.

Core characteristic

Floating zone method (FZ) growth process:

 Ultra-low impurity content: Oxygen and carbon impurities are completely removed by floating zone melting technology, and the defect density is much lower than that of CZ silicon wafers.

 Perfect crystal structure:  Suitable for high frequency and high voltage devices that require high material uniformity.

<100> Orientation advantage:

 Uniform atomic arrangement:  Support high-quality epitaxial layer growth, compatible with CMOS, MOSFET and other device processes.

Thermal stability:  Withstand high temperature oxidation and annealing processes, suitable for harsh working environments.

Ultra-high resistivity (R>1000Ω·cm to 10,000Ω·cm) :

 Low leakage current:  Minimizes energy loss in high frequency and high voltage applications.

High breakdown voltage:  High voltage power devices for electric vehicles, industrial drives and renewable energy systems.

Single-side polishing process:

 Mirror finish (Ra < 0.5nm) :  Provides ultra-smooth surfaces for photolithography and precision device fabrication.

Back etching/grinding:  Reduces costs while ensuring mechanical stability.

4 inch (100mm) diameter:

Considering cost effectiveness and equipment compatibility, it is suitable for small and medium-sized batch production and research and development.

Technological advantage

 Unmatched resistivity:  Meets high insulation requirements and reduces device energy consumption.

 Extreme material purity: Floating zone process improves device reliability and life.

Thermal management and mechanical stability:  Adaptable to high temperature processes and mechanical stress environments.

 Flexible adaptation:  Compatible with 4-inch production line, supporting rapid mass production and prototype development.

Technical parameter

 Type: Floating Zone Method (FZ) silicon wafer

Resistivity: >1000Ω·cm to 10,000Ω·cm

Diameter: 4 inches (100mm)

Crystal direction: <100>

 Thickness:  500-675µm (customizable)

Surface treatment: Single side polishing (front Ra < 0.5nm), back etching/grinding

Thickness uniformity (TTV) : <10µm

Choice reason

Industry compliance:  Meets SEMI standards to ensure resistivity uniformity, flatness and surface cleanliness.

 Customized services:  Support resistivity range, oxide thickness and doping concentration adjustment.

Strict quality control:  Defect detection and particle control ensure high yield.

 Technical support: Suppliers provide process integration and optimization solutions.

Conclusion

With its <100> crystal orientation, ultra-high resistivity (R>1000Ω/10,000Ω) and single-sided polishing process, 4-inch FZ wafers are an innovative substrate for high-power, high-frequency and high-voltage semiconductor applications. Whether advancing 5G communications, new energy technologies, or exploring quantum technologies, the silicon wafer enables cutting-edge innovation with superior performance and reliability.

Take your technology projects to the next level with this ultra-high resistivity silicon wafer today!