High-Precision 5-Inch P/N-Type Silicon Wafer (100 Orientation) with Single-Side Polishing for Advanced Semiconductor Solutions
Introduction
The 5-inch P/N-type silicon wafer with <100> crystal orientation and single-side polishing is a versatile and cost-effective substrate designed for cutting-edge semiconductor and microelectronics applications. Combining high purity, precise doping, and exceptional surface quality, this wafer is tailored for both industrial manufacturing and research-driven projects. This article highlights its features, applications, and advantages in modern technology.
Key Features of the 5-Inch P/N-Type Silicon Wafer
<100> Crystal Orientation:
A widely used orientation for semiconductor devices due to its uniform atomic structure, enabling high-quality epitaxial growth and compatibility with oxide layers.
Ideal for CMOS sensors, MOSFETs, and integrated circuits (ICs).
P/N-Type Doping Flexibility:
P-Type (Boron-Doped): Optimized for hole conduction in analog circuits, power devices, and solar cells.
N-Type (Phosphorus/Arsenic-Doped): Delivers high electron mobility for high-speed transistors, RF components, and optoelectronics.
Single-Side Polishing:
Frontside polished to a mirror finish (surface roughness Ra < 0.5 nm) for precise device fabrication.
Backside remains unpolished or etched for cost efficiency, mechanical stability, or adhesion during processing.
High Purity and Low Defect Density:
Produced via Czochralski (CZ) or Float-Zone (FZ) methods, ensuring minimal impurities and crystal defects for reliable performance.
5-Inch Diameter:
Bridges the gap between smaller research-grade wafers and larger industrial formats, offering scalability for prototyping and mid-volume production.
Advantages Over Competing Substrates
Doping Versatility: Choose P-type or N-type doping to match specific conductivity requirements.
Cost Efficiency: Single-side polishing reduces production costs without sacrificing device-side quality.
Thermal Stability: Withstands high-temperature processes such as oxidation and diffusion.
Scalability: Compatible with 125mm fabrication tools, supporting seamless integration into existing workflows.
Technical Specifications
Type: P-type (Boron-doped) / N-type (Phosphorus/Arsenic-doped)
Resistivity Range: 0.001–50 ohm-cm (customizable)
Diameter: 5 inches (125 mm)
Orientation: <100>
Thickness: 300–500 µm (adjustable)
Surface Finish: Single-side polished (frontside), etched or lapped backside
TTV (Total Thickness Variation): < 5 µm
Why Choose This Wafer?
Industry Compliance: Meets SEMI standards for flatness, resistivity uniformity, and particle control.
Customization: Adjust doping levels, thickness, and oxide layers for niche applications.
Quality Assurance: Rigorous defect inspection ensures high yields in device fabrication.
Conclusion
The 5-inch P/N-type silicon wafer with <100> orientation and single-side polishing is a foundational material for advancing semiconductor technology. Its adaptability, superior surface quality, and cost efficiency make it indispensable for MEMS, power electronics, optoelectronics, and research initiatives. Whether scaling prototypes or optimizing production, this wafer delivers the precision and reliability needed to drive innovation.
Upgrade your semiconductor projects with this high-performance 5-inch silicon substrate today!
