8-Inch P-Type Silicon Wafer with 1-100Ω Oxide Layer: Specifications and Applications、

Introduction

The 8-inch P-Type Silicon Wafer with a 1-100Ω oxide layer is a versatile semiconductor substrate widely used in device prototyping, MEMS production, and mid-volume electronics manufacturing. Combining boron doping for precise electrical control and a thermally grown silicon oxide (SiO₂) layer for surface passivation, this wafer balances cost efficiency with performance, making it ideal for both research and industrial applications.

Key Features

1. P-Type Boron Doping

   • Provides hole-dominated conductivity, essential for CMOS circuits, power MOSFETs, and analog devices.

   • Resistivity range (1~100Ω·cm) supports applications from low-power sensors to high-current power modules.

2. Oxide Layer (SiO₂)

   • Thickness Options: 10 nm to 2 μm, tailored for insulation, passivation, or as a dielectric layer.

   • Functions:

     • Reduces surface recombination and contamination.

     • Enhances device reliability in harsh environments.

     • Acts as a mask during etching or ion implantation.

3. Surface Quality

   • Single-Sided Polishing: A mirror finish (Ra < 0.5 nm) ensures precision in lithography and thin-film deposition.

   • Dust-Free Handling: Manufactured in controlled environments to minimize particulate defects.

1. Prototyping and R&D

   • Cost-effective for testing new device architectures due to its smaller size (8-inch) and lower material waste.

Technical Specifications

• Diameter: 8 inches (200 mm)

• Thickness: ~725 μm (standard)

• Resistivity: 1~100Ω·cm (customizable)

• Oxide Layer Thickness: 10 nm to 2 μm

• Surface Finish: Single-side polished (SSP)

• Oxygen Content: < 18 ppma (ASTM standards)

Advantages of 8-Inch P-Type Oxide Wafers

1. Cost Efficiency

   • Lower production costs compared to 12-inch wafers, ideal for medium-scale fabrication and academic labs.

2. Compatibility

   • Widely compatible with legacy 8-inch fabrication tools, reducing equipment upgrade costs.

3. Defect Control

   • Advanced polishing and oxide growth techniques minimize surface defects and ensure high process yield.

4. Flexibility

   • Suitable for diverse processes, including dry etching, chemical vapor deposition (CVD), and ion implantation.

Market Trends

• Demand Growth: The 8-inch wafer market remains robust, driven by IoT, automotive electronics, and legacy semiconductor production lines.

• Localization Efforts: China’s semiconductor industry is expanding 8-inch wafer production to reduce reliance on imports.

• Sustainability: Recyclability of test-grade wafers aligns with green manufacturing initiatives.

Why Choose 8-Inch Wafers?

• Balanced Throughput: Optimized for mid-volume production, offering faster turnaround times than 12-inch alternatives.

• R&D-Friendly: Smaller size reduces material costs for iterative testing and academic projects.

• Proven Reliability: Decades of industrial use ensure mature fabrication protocols and consistent quality.

Conclusion

The 8-inch P-Type Silicon Wafer with a 1-100Ω oxide layer is a cornerstone of semiconductor innovation, bridging the gap between R&D and industrial production. Its adaptability to CMOS, power devices, and MEMS applications,