♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
Size: 4inch;
Diameter: 100.8 mm ±0.5;
Thickness: 500 um±25;
Surface Orientation: <0001>±0.2°;
Primary flat orientation:[11-20]±5°;
Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°;
Micropipe: N/A;
Resistivity: N/A;
TTV≤10um;
Warp≤45um;
Bow≤≤30um;
Surface Roughness: Si face Ra≤0.5 nm;
Cracks: None;
Wafer edge: Bevelling;
Surface finish: Double Side Polish, Si Face CMP;
Packing: Multi-wafer Cassette Or Single Wafer Container;