Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT

♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.2;
  • Thickness: 350 um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: None;
  • Micropipe: None;
  • Resistivity: None;
  • TTV≤10um;
  • Warp≤60um;
  • Bow≤40um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;
The difference between NG grade and Dummy grade products mainly in the poly area on the surface.
NG grade poly area is more than 5%.
NG grade products are mainly used for equipment testing and have better cost performance.


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