♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
Size: 6inch;
Diameter: 150mm±0.2;
Thickness: 350 um±25;
Surface Orientation: 4°toward[11-20]±5°;
Primary flat orientation:[11-20]±5°;
Secondary flat orientation: None;
Micropipe: None;
Resistivity: None;
TTV≤10um;
Warp≤60um;
Bow≤40um;
Surface Roughness: Si face Ra≤0.5 nm;
Cracks: None;
Wafer edge: Bevelling;
Surface finish: Double Side Polish, Si Face CMP;
Packing: Multi-wafer Cassette Or Single Wafer Container;