♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
Size: 6inch;
Diameter: 150mm±0.25;
Thickness: 350um±25;
Surface Orientation: 4°toward[11-20]±5°;
Primary Flat orientation:[1-100]±5°;
Primary Flat Length:47.5mm±1.5;
Secondary flat: None;
Micropipe: ≤0.15/cm2;
BPD：≤800ea/cm2;
TSD：≤200ea/cm2;
Resistivity: 0.015~0.028Ω;
TTV≤10um;
Warp≤15um;
Bow≤20um;
Surface Roughness: Si face Ra＜0.2 nm;
Cracks: None;
Scratches: ≤5ea/mm;
Edge Chips: None;
Surface finish: Double Side Polish, Si Face CMP;
Packing: Multi-wafer Cassette Or Single Wafer Container;
