♦️High-quality SiC wafer for Research and Experiment.

♦️Provide thinning process, thickness from 100um.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 4inch;

• Poly tyep: 4H;

• Diameter: 99.5~100mm;

• Thickness: 500um±25;

• Surface Orientation on-axis: <0001>;

• FWHM(0004):<45arcsec;

• Primary flat orientation: [1-100]±5°;

• Primary flat length: 32.5±1.5mm;

• Secondary flat: None;

• Micropipe: ≤1ea/cm2;

• Hexagonal void：None;

• Resistivity: ≥1E10ohm·cm;

• LTV≤None;

• TTV≤5um

• Warp≤20um;

• Bow≤-15μm~15μm;

• Surface Roughness: Si face Ra＜0.2 nm(5*5mm);

• Poly area: None;

• Scratches: ≤2，Total Length≤Diameter;

• Back defects: None;

• Particels: ≤60（size≥0.3μm;

• Surface finish: Double Side Polish, Si Face CMP;

• Packing: Multi-wafer Cassette Or Single Wafer Container;