♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 8inch;

• Type: N;

• Diameter: 200mm±0.2;

• Thickness: 350um±25;or500um±25

• Surface Orientation: 4 toward [11-20]±0.5°;

• Notch orientation:[1-100]±5°；

• Notch depth: 1~1.5mm；

• Micropipe: <0.2ea/cm2;

• Resistivity: 0.015~0.025Ω;

• TSD: <200ea/cm2;

• TED: <3000ea/cm2;

• BPD: <1000ea/cm2;

• TTV≤7um；

• Warp≤30um；

• Bow≤-20~20umum；

• Poly areas: None;

• Chips/Indents: None;

• Scratch:≤5,Total Length≤Diameter;

• Stain: None;

• Wafer edge: Chamfer;

• Surface finish: Double Side Polish, Si Face CMP;

• Packing: Multi-wafer Cassette Or Single Wafer Container;