♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 6inch;

• Diameter: 150mm±0.5;

• Thickness: 350 um±25;

• Type:N-Type;

• Dopant:Nitrogen;

• Primary flat Location:<1120>+/-5degree；

• Epi-surface Inspection

• surface pits (size > 0.2um):≦ 5000 ea

• surface defect (size > 10um):≦ 1 ea/cm-2;

• BPD counts:≦ 20 ea

• Die yield (2*2mm, EE 5mm):≧ 95%;

• Buffer Layer

• Target Thickness (avg.):1um±10%;

• Target Doping concentration (avg.):1.0E18/cm3 ±10%;

• Drift Layer

• Target Thickness (avg.):10um ±6%;

• Target Doping concentration (avg.):8.5E15/cm3 ±10%;

• Wafer edge: Chamfer;

• Surface finish: Double Side Polish, Si Face CMP;

• Packing: Multi-wafer Cassette Or Single Wafer Container;